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Power Transistors
2SC4004
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.70.1
s Features
q q q q q
4.20.2
10.00.2 5.50.2
4.20.2 2.70.2
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C)
Ratings 900 900 800 7 2 1 0.3 30 2 150 -55 to +150 Unit V V V V A A A W C C
16.70.3
7.50.2
3.10.1
4.0
1.70.2 Solder Dip 1.30.2 1.050.1 0.80.1 0.5-0.1 2.540.3
+0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
14.00.5
5.080.5
1
2
3
1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(b)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.5A IC = 0.2A, IB = 0.04A IC = 0.2A, IB = 0.04A VCE = 10V, IC = 0.05A, f = 1MHz IC = 0.2A, IB1 = 0.04A, IB2 = - 0.04A, VCC = 250V 4 1.0 3.0 1.0 800 6 3 1.5 1.0 V V MHz s s s min typ max 50 50 Unit A A V
1
Power Transistors
PC -- Ta
40 1.2 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 1.0 IB=140mA 120mA 100mA 80mA 0.6 60mA 40mA 0.4 20mA 0.2
2SC4004
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 100C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 25C
VCE(sat) -- IC
Collector power dissipation PC (W)
30
Collector current IC (A)
(1)
0.8
20
10
(2) (3) (4)
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=5 1000 VCB=5V 1000
fT -- IC
VCE=10V f=1MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
30
300
Transition frequency fT (MHz)
0.3 1 3 10
300
10
100
100
3
30
TC=100C -25C 25C
30
1
TC=-25C 25C 100C
10
10
0.3
3
3
0.1 0.01 0.03
0.1
0.3
1
3
10
1 0.01 0.03
0.1
1 0.001 0.003
0.01 0.03
0.1
0.3
1
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
1000 100 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=-IB2) VCC=200V TC=25C
Area of safe operation (ASO)
10 3 Non repetitive pulse TC=25C ICP IC 10ms 0.3 DC 0.1 0.03 0.01 0.003 0.001 t=1ms
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (s)
300
10 3 tstg 1 0.3 0.1 0.03 ton tf
Collector current IC (A)
0.8
1
100
30
10
3
1 1 3 10 30 100
0.01 0 0.2 0.4 0.6
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
1.6 1.4 Lcoil=100H IC/IB=5 (IB1=-IB2) TC=25C
2SC4004
Reverse bias ASO measuring circuit
L coil IB1 T.U.T IC
Collector current IC (A)
1.2 1.0 0.8 0.6 0.4 0.2 0 0 200 400 600 800 1000 1200 1400 1600 IC
Vin
-IB2
VCC
tW
Vclamp
Collector to emitter voltage VCE (V)
Rth(t) -- t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
1000
100
(1)
10
(2)
1
0.1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
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2001 MAR

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